AUIRFP2907 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD -97692A
AUIRFP2907
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
HEXFET^® Power MOSFET
D
V_(BR)DSS
R_DS(on) typ.
max
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
75V
3.6mΩ
4.5mΩ
h 209A
90A
D
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
G
Gate
S
D
G
TO-247AC
AUIRFP2907
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
209h
148h
Units
A
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
90
I_DM
c Pulsed Drain Current
840
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
470
W
3.1
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
± 20
1970
See Fig. 12a, 12b, 15, 16
5.0
V
mJ
A
mJ
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
y y ³⁰⁰
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
Typ.
–––
Max.
0.32
Units
R_θCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
R_θJA
Junction-to-Ambient
–––
40
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/11/11