AUIRFP1405 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97724
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the de-
signer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
other applications.
AUIRFP1405
HEXFET^® Power MOSFET
D V_(BR)DSS
R_DS(on) typ.
max
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
55V
4.2mΩ
i ^5.3mΩ
160A
95A
G
Gate
D
S
D
G
TO-247AC
AUIRFP1405
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
160i
110i
Units
A
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
95
I_DM
c Pulsed Drain Current
640
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
310
W
2.0
W/°C
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
c Avalanche Current
c Repetitive Avalanche Energy
± 20
V
530
mJ
1060
See Fig. 12a, 12b, 15, 16
A
mJ
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
y y ³⁰⁰
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
Typ.
–––
Max.
0.49
Units
R_θCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
R_θJA
Junction-to-Ambient
–––
40
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/02/11