AUIRFN8459 Datasheet, PDF (1/10 Pages) International Rectifier – Dual N-Channel MOSFET

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Dual N-Channel MOSFET
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast swithcing speed and improved repetitive avalanche rating.
These features combine to make this product an extremely
efficient and reliable device for use in Automotive and wide variety
of other applications.
Applications
 12V Automotive Systems
 Brushed DC Motor
 Braking
 Transmission
AUIRFN8459
V_DSS
R_{DS(on) typ.}
max
I_D (Silicon Limited)
I_D (Package Limited)
40V
4.8m
5.9m
70A
50A
G
Gate
DUAL PQFN 5X6 mm
D
Drain
S
Source
Base Part Number
Package Type
AUIRFN8459
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRFN8459TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I_D @ T_{C (Bottom)} = 25°C
I_D @ T_{C (Bottom)} = 100°C
I_D @ T_{C (Bottom)} = 25°C
I_DM
P_D @T_{C (Bottom)} = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (Tested)
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Max.
70
50
50
320
50
0.33
± 20
66
110
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
°C
1 www.irf.com © 2014 International Rectifier
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July 29, 2014