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| AUIRFL014N Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance | |||
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AUTOMOTIVE GRADE
PD-96382A
AUIRFL014N
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D
V(BR)DSS
55V
G
RDS(on) max. 0.16Ω
S
ID
1.9A
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
G
Gate
D
S
D
G
SOT-223
AUIRFL014N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Parameter
h Continuous Drain Current, VGS @ 10V
g Continuous Drain Current, VGS @ 10V
g Continuous Drain Current, VGS @ 10V
 Pulsed Drain Current
h Power Dissipation (PCB Mount)
g Power Dissipation (PCB Mount)
g Linear Derating Factor (PCB Mount)
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Âg Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
RθJA
RθJA
g Junction-to-Ambient (PCB mount, steady state)
h Junction-to-Ambient (PCB mount, steady state)
Max.
2.7
1.9
1.5
15
2.1
1.0
8.3
±20
48
1.7
0.1
5.0
-55 to + 150
Typ.
90
50
Max.
120
60
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11
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