AUIRFIZ44N Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
PD - 97767
Features
l Advanced Planar Technology
l Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS…
l Sink to Lead Creepage Distantce = 4.8mm
l 175°C Operating Temperature
l Fully Avalanche Rated
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRFIZ44N
HEXFET^® Power MOSFET
V_(BR)DSS
R_DS(on) max.
I_D
55V
24m
31A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
S
D
G
TO-220AB Full-Pak
AUIRFIZ44N
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
I_DM
ch Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dh Single Pulse Avalanche Energy (Thermally Limited)
ch Avalanche Current
c Repetitive Avalanche Energy
eh Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
i Junction-to-Case
R_JA
Junction-to-Ambient
Max.
31
22
160
45
0.3
± 20
210
25
4.5
5.0
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Typ.
–––
–––
Max.
3.3
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/14/12