AUIRFIZ34N Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
PD - 97778
Features
l Advanced Planar Technology
l Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS…
l Sink to Lead Creepage Distantce = 4.8mm
l 175°C Operating Temperature
l Fully Avalanche Rated
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for
use in Automotive and a wide variety of other
applications.
AUIRFIZ34N
HEXFET^® Power MOSFET
V_(BR)DSS
R_DS(on) max.
I_D
55V
40m
21A
S
D
G
TO-220AB Full-Pak
AUIRFIZ34N
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
I_DM
ch Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dh Single Pulse Avalanche Energy (Thermally Limited)
ch Avalanche Current
c Repetitive Avalanche Energy
eh Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
i Junction-to-Case
R_JA
Junction-to-Ambient
Max.
21
15
100
37
0.24
± 20
110
16
3.7
5.0
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Typ.
–––
–––
Max.
4.1
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
04/20/12