AUIRFB8409 Datasheet, PDF (1/14 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
AUIRFB8409
AUIRFS8409
AUIRFSL8409
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Applications
HEXFET^® Power MOSFET
D
V_DSS
40V
R_DS(on) (SMD) typ. 0.97mΩ
max. 1.2mΩ
G
I_{D (Silicon Limited)}
c 409A
S
I_{D (Package Limited)}
195A
D
D
DS
G
TO-220AB
AUIRFB8409
S
G
D²Pak
AUIRFS8409
D
S
D
G
TO-262
AUIRFSL8409
G
Gate
D
Drain
S
Source
Base part number
Package Type
Standard Pack
Orderable Part Number
AUIRFB8409
AUIRFS8409
AUIRFS8409
AUIRFSL8409
TO-220
D2-Pak
D2-Pak
TO-262
Form
Tube
Tube
Tape and Reel Left
Tube
Quantity
50
50
800
50
AUIRFB8409
AUIRFS8409
AUIRFS8409TRL
AUIRFSL8409
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Max.
409™
289™
195
1524
Units
A
P_D @T_C = 25°C Maximum Power Dissipation
375
W
Linear Derating Factor
2.5
W/°C
V_GS
E_AS
E_{AS (tested)}
I_AR
E_AR
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
l Single Pulse Avalanche Energy Tested Value
Ãd Avalanche Current
d Repetitive Avalanche Energy
± 20
V
760
mJ
1360
See Fig. 14, 15, 24a, 24b
A
mJ
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
x x 10lbf in (1.1N m)
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
April 30, 2013