AUIRFB4610 Datasheet, PDF (1/13 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
PD - 96325
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFB4610
AUIRFS4610
HEXFET^® Power MOSFET
G
D
V_(BR)DSS
R_DS(on) typ.
max.
100V
11m:
14m:
S
I_D
73A
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
D
DS
G
TO-220AB
AUIRFB4610
D
DS
G
D²Pak
AUIRFS4610
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dV/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
f Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally limited)
Ù Avalanche Current
™ Repetitive Avalanche Energy
e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220
R_θJA
i Junction-to-Ambient (PCB Mount) , D²Pak
Max.
73
52
290
190
1.3
± 20
370
See Fig. 14, 15, 16a, 16b,
7.6
-55 to + 175
300
x x 10lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.77
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10