AUIRFB4410 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUTOMOTIVE GRADE
D
G
S
PD - 97598
AUIRFB4410
HEXFET^® Power MOSFET
V_DSS
100V
R_DS(on) typ.
max.
8.0mΩ
10mΩ
I_{D (Silicon Limited)}
88A
I_{D (Package Limited)}
75A
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
G
Gate
DS
G
TO-220AB
AUIRFB4410
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Max.
88™
63
75
380
200
Units
A
W
Linear Derating Factor
1.3
W/°C
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
± 20
19
V
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
x x 10lb in (1.1N m)
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
Thermal Resistance
220
mJ
See Fig. 14, 15, 16a, 16b
A
mJ
Symbol
R_θJC
R_θCS
R_θJA
Parameter
j Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.61
–––
62
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/23/2010