AUIRF9Z34N Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE GRADE Advanced Planar Technology

AUTOMOTIVE GRADE
PD - 97627A
AUIRF9Z34N
Features
l Advanced Planar Technology
l P-Channel MOSFET
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET^® Power MOSFET
D _V(BR)DSS
-55V
R_DS(on) max. _0.10Ω
S ^I_D
-19A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
DS
G
TO-220AB
AUIRF9Z34N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
I_DM
c Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
g Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
-19
-14
-68
68
0.45
± 20
180
-10
6.8
-5.0
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
2.2
–––
62
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/21/11