AUIRF9952Q Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
PD - 97647
AUIRF9952Q
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual N and P Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Full Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
V ⁷
D1
(BR)DSS
S2
3
G2
4
6
5
D2
D2
R_DS(on) max.
P-CHANNEL MOSFET
Top View
I_D
N-CH P-CH
30V -30V
0.10Ω 0.25Ω
3.5A -2.3A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF9952Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_A = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V
I_D @ T_A = 70°C
I_DM
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
P_D @T_A = 25°C Power Dissipation
P_D @T_A = 70°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
e Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
d Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
g Junction-to-Ambient (PCB Mount, steady state)
Max.
N-Channel
P-Channel
3.5
-2.3
2.8
-1.8
16
-10
2.0
1.3
0.016
± 20
44
57
2.0
-1.3
0.25
5.0
-5.0
-55 to + 150
Typ.
–––
Max.
62.5
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
04/25/11