AUIRF8736M2TR Datasheet, PDF (1/12 Pages) International Rectifier – Automotive DirectFET® Power MOSFET

AUTOMOTIVE GRADE
AUIRF8736M2TR
 Advanced Process Technology
 Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
 Exceptionally Small Footprint and Low Profile
 High Power Density
 Low Parasitic Parameters
 Dual Sided Cooling
 175°C Operating Temperature
 Repetitive Avalanche Allowed up to Tjmax
 Lead Free, RoHS Compliant and Halogen Free
 Automotive Qualified *
Automotive DirectFET^® Power MOSFET 
V_(BR)DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
Q_g
40V
1.3m
1.9m
137A
136nC





Applicable DirectFET^® Outline and Substrate Outline 
M4
DirectFET^® ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
AUIRF8736M2
DirectFET2 M-CAN
Tape and Reel
4800
AUIRF8736M2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS (Tested)
I_AR
E_AR
T_P
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Pulsed Drain Current 
Power Dissipation 
Power Dissipation 
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
±20
137
97
27
565
63
2.5
82
254
See Fig. 14, 15, 22a, 22b
Units
V
A
W
mJ
A
270
mJ
-55 to + 175
°C
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier
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January 14, 2014