AUIRF7805Q Datasheet, PDF (1/8 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

PD – 96367B
Features
l Advanced Planar Technology
l Low On-Resistance
l Logic Level
l N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free, RoHS Compliant
AUIRF7805Q
HEXFET^® Power MOSFET
S
1
S
2
S
3
G
4
8
AA
D
V_(BR)DSS
30V
7
D
6
D
5
D
R_DS(on) typ. 9.2mΩ
max. 11mΩ
Top View
I_D
13A
Description
Specifically designed for Automotive applications,
these HEXFET^® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient
and reliable device for use in Automotive applications
and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
e Power Dissipation
e Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
R_θJL
R_θJA
g ^Parameter
Junction-to-Drain Lead
e Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11