AUIRF7799L2TR Datasheet, PDF (1/12 Pages) International Rectifier – Automotive DirectFET® Power MOSFET

PD - 96421
AUTOMOTIVE GRADE _{AUIRF7799L2TR}
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
AUIRF7799L2TR1
Automotive DirectFET^® Power MOSFET ‚
V_(BR)DSS
R_DS(on) typ.
250V
32mΩ
max.
38mΩ
I_{D (Silicon Limited)}
Q_g
35A
110nC
S
S
D
GS
S
S
S
D
S
S
Applicable DirectFET® Outline and Substrate Outline 
L8
DirectFET^® ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7799L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7799L2TR to offer substantial system level savings and perfor-
mance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This
MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET
are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly
efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
250
V
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
EAS
IAR
EAR
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Package Limited)
g Pulsed Drain Current
f Power Dissipation
f Power Dissipation
™ Power Dissipation
h Single Pulse Avalanche Energy
Ãg Avalanche Current
g Repetitive Avalanche Energy
±30
35
25
6.6
375
140
125
63
4.3
325
See Fig.18a, 18b, 16, 17
A
W
mJ
A
mJ
TP
Peak Soldering Temperature
270
TJ
Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
R_θJA
R_θJA
R_θJ -c an
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
Parameter
R_θJ -P CB
Junction-to-PCB Mounted
f Linear Derating Factor
Typ.
Max.
–––
35
12.5
–––
20
–––
–––
1.2
–––
0.5
0.83
Units
°C/W
W/°C
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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12/13/11