AUIRF7759L2TR Datasheet, PDF (1/12 Pages) International Rectifier – Automotive DirectFET®Power MOSFET 

AUTOMOTIVE GRADE
PD - 96426
AUIRF7759L2TR
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
AUIRF7759L2TR1
Automotive DirectFET^® Power MOSFET ‚
V_(BR)DSS
R_DS(on) typ.
75V
1.8mΩ
max.
2.3mΩ
I_{D (Silicon Limited)}
Q_g
160A
200nC
S
S
S
S
Applicable DirectFET® Outline and Substrate Outline 
SB
SC
M2
M4
D
GS
S
L8
D
S
S
L4
L6
DirectFET^® ISOMETRIC
L8
Description
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
P_D @T_A = 25°C
E_AS
I_AR
E_AR
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Package Limited)
g Pulsed Drain Current
f Power Dissipation
f Power Dissipation
™ Power Dissipation
h Single Pulse Avalanche Energy
Ãg Avalanche Current
g Repetitive Avalanche Energy
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJ-Can
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
Parameter
R_θJ-PCB
Junction-to-PCB Mounted
f Linear Derating Factor
Max.
75
±20
160
113
26
375
640
125
63
3.3
257
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Typ.
Max.
–––
45
12.5
–––
20
–––
–––
1.2
–––
0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
1
03/28/12