AUIRF7749L2TR Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
AUIRF7749L2TR
 Advanced Process Technology
 Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
 Exceptionally Small Footprint and Low Profile
 High Power Density
 Low Parasitic Parameters
 Dual Sided Cooling
 175°C Operating Temperature
 Repetitive Avalanche Allowed up to Tjmax
 Lead Free, RoHS Compliant and Halogen Free
 Automotive Qualified *
Automotive DirectFET^® Power MOSFET 
V_(BR)DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
Q_g
60V
1.1m
1.5m
345A
183nC
S
S
D
G
S
S
S
S
SD
S
Applicable DirectFET^® Outline and Substrate Outline 
L8
DirectFET2 L-can
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7749L2 combines the latest Automotive HEXFET^® Power MOSFET Silicon technology with the advanced DirectFET^® packaging technology
to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The DirectFET^® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET^® package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET^® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET^® packaging
platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
AUIRF7749L2
Package Type
DirectFET^®
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7749L2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS (Tested)
I_AR
E_AR
T_P
T_J
T_STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V (Package limit) 
Pulsed Drain Current 
Power Dissipation 
Power Dissipation 
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Max.
60
345
243
36
375
1380
341
3.8
315
714
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
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August 10, 2015