AUIRF7739L2TR Datasheet, PDF (1/11 Pages) International Rectifier – Automotive DirectFET

Power MOSFET

PD - 97442
AUIRF7739L2TR
AUTOMOTIVE GRADE _{AUIRF7739L2TR1}
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
Automotive DirectFET™ Power MOSFET ‚
V_(BR)DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
Q_g
40V
700µΩ
1000µΩ
270A
220nC
Applicable DirectFET Outline and Substrate Outline 
L8
DirectFET™ ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS (tested)
I_AR
E_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
f Power Dissipation
e Power Dissipation
h Single Pulse Avalanche Energy (Thermally Limited)
g Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
™ Repetitive Avalanche Energy
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJCan
Parameter
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
R_θJ-PCB
Junction-to-PCB Mounted
f Linear Derating Factor
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
Max.
40
± 20
270
190
46
375
1070
125
3.8
270
160
See Fig.12a, 12b, 15, 16
270
-55 to + 175
Typ.
–––
12.5
20
–––
–––
Max.
40
–––
–––
1.2
0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
1
01/05/10