AUIRF7736M2TR1 Datasheet, PDF (1/11 Pages) International Rectifier – Automotive DirectFET

Power MOSFET

PD - 96316B
AUTOMOTIVE GRADE ^{AUIRF7736M2TR}
AUIRF7736M2TR1
Automotive DirectFET^® Power MOSFET ‚
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
V_(BR)DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
Q_g
55
&
)
55
&
40V
2.5mΩ
3.0mΩ
108A
72nC
Applicable DirectFET® Outline and Substrate Outline 
M4
DirectFET^® ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7736M2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS (tested)
I_AR
E_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
g ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
f Power Dissipation
e Power Dissipation
h Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ãg Avalanche Current
g Repetitive Avalanche Energy
40
V
± 20
108
77
22
A
179
432
63
W
2.5
54
mJ
286
See Fig. 18a,18b,16,17
A
mJ
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
270
-55 to + 175
°C
R_θJA
R_θJA
R_θJA
R_θJCan
Parameter
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
Typ.
–––
12.5
20
–––
Max.
60
–––
–––
2.4
Units
°C/W
R_θJ-PCB
Junction-to-PCB Mounted
f Linear Derating Factor
1.0
–––
0.42
W/°C
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
1
11/08/10