AUIRF7647S2TR Datasheet, PDF (1/11 Pages) International Rectifier – DirectFET Power MOSFET

AUTOMOTIVE GRADE
PD - 97537
AUIRF7647S2TR
AUIRF7647S2TR1
• Advanced Process Technology
• Optimized for Class D Audio Amplifier Applications
• Low Rds(on) for Improved Efficiency
• Low Qg for Better THD and Improved Efficiency
• Low Qrr for Better THD and Lower EMI
• Low Parasitic Inductance for Reduced Ringing and Lower EMI
• Delivers up to 100W per Channel into 8Ω with No Heatsink
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and Reliability
• Lead free, RoHS and Halogen free
DirectFET™ Power MOSFET ‚
V_(BR)DSS
R_DS(on) typ.
max.
R_{G (typical)}
Q_{g (typical)}
100V
26mΩ
31mΩ
1.6Ω
14nC
S
D
G
D
S
Applicable DirectFET Outline and Substrate Outline 
SC
DirectFET™ ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance
and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage
ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive
Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS(tested)
I_AR
E_AR
T_P
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Pulsed Drain Current
f Power Dissipation
e Power Dissipation
h Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy (Tested Value)
Ãg Avalanche Current
g Repetitive Avalanche Energy
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJ-Can
R_θJ-PCB
Parameter
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
Junction-to-PCB Mounted
f Linear Derating Factor
Max.
100
± 20
24
17
5.9
95
41
2.5
45
67
See Fig. 18a,18b,16,17
270
-55 to + 175
Typ.
Max.
–––
60
12.5
–––
20
–––
–––
3.7
1.4
–––
0.27
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
1
07/13/2010