AUIRF7484Q Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97757
Features
l Advanced Planar Technology
l Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF7484Q
HEXFET^® Power MOSFET
S
1
V ^AA
8
D
(BR)DSS
S
2
7
D
S
3
6 _{D RDS(on) max.}
G
4
5
D
Top View
I_D
40V
10m
14A
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
SO-8
AUIRF7484Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
E_AS
I_AR
E_AR
T_J
T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current
c ^{Continuous Drain Current}
Pulsed Drain Current
e Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
f Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
h Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Max.
40
14
11
110
2.5
0.02
± 8.0
230
See Fig. 16c, 16d, 19, 20
-55 to + 150
Units
V
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
R_JL
Junction-to-Drain Lead
R_JA
e Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/26/12