AUIRF7478Q Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
PD- 96423A
AUIRF7478Q
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET^® Power MOSFET
S
1
8
AA
D
V_(BR)DSS
60V
S
2
S
3
G
4
7 _{D RDS(on) typ. 20mΩ}
6
D
5
D
max. 26mΩ
Top View
I_D
7.0A
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
f Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
dv/dt
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
Ù Avalanche Current
h Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJL
R_θJA
Junction-to-Drain Lead
f Junction-to-Ambient
Max.
60
7.0
5.6
56
2.5
0.02
± 20
140
4.2
3.7
-55 to + 150
300 (1.6mm from case)
Max.
20
50
Units
V
A
W
W/°C
V
mJ
A
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/13/12