AUIRF7416Q Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology Low On-Resistance

AUTOMOTIVE GRADE
PD - 97642
Features
l Advanced Process Technology
l Low On-Resistance
l P-Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF7416Q
HEXFET^® Power MOSFET
S
1
V ^A
8
D
(BR)DSS
S
2
7
D
S
3
6 _{D RDS(on) max.}
G
4
5
D
Top View
I_D
-30V
0.02Ω
-10A
Description
Specifically designed for Automotive applications, this cel-
lular design of HEXFET® Power MOSFETs utilizes the lat-
est processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automo-
tive and a wide variety of other applications.
SO-8
AUIRF7416Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-
tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature
(T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ -10V
I_D @ T_A = 70°C
I_DM
Continuous Drain Current, V_GS @ -10V
c Pulsed Drain Current
P_D @T_A = 25°C
Power Dissipation
Linear Derating Factor
V_GS
E_AS
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
g Junction-to-Ambient
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Max.
50
Units
A
W
mW/°C
V
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/28/2011