AUIRF7342Q Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
PD - 97640
● Advanced Planar Technology
● Low On-Resistance
● Dual P-Channel MOSFET
● Dynamic dV/dT Rating
● 150°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free, RoHS Compliant
● Automotive Qualified*
AUIRF7342Q
HEXFET^® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_(BR)DSS
R_DS(on) max.
I_D
-55V
0.105Ω
-3.4A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-resis-
tance per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
SO-8
AUIRF7342Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
V_DS
Drain-Source Voltage
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
c Pulsed Drain Current
P_D @T_A = 25°C
P_D @T_A = 70°C
Power Dissipation
e Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
V_GSM
E_AS
dv/dt
Gate-to-Source Voltage Single Pulse tp<10μs
d Single Pulse Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
g Junction-to-Ambient
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
Max.
62.5
Units
V
A
W
mW/°C
V
V
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/25/2011