AUIRF7341Q Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology Ultra Low On-Resistance

Features
l Advanced Planar Technology
l Ultra Low On-Resistance
l Dual N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 175°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free, RoHS Compliant
AUTOMOTIVE MOSFET
PD - 96362A
AUIRF7341Q
HEXFET^® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_(BR)DSS
55V
R_DS(on) typ. 0.043_Ω
max. 0.050Ω
I_D
5.1A
Description
Specifically designed for Automotive applications, these
HEXFET^® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
e Power Dissipation
e Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
T_J
T_STG
Thermal Resistance
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Parameter
R_θJA
f Junction-to-Ambient
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 16,17,14a, 14b
-55 to + 175
Max.
62.5
Units
V
A
W
mW/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/22/11