AUIRF7316Q Datasheet, PDF (1/10 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

PD - 96365B
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free, RoHS Compliant
AUIRF7316Q
HEXFET^® Power MOSFET
S1
1
8
D1 ^V(BR)DSS
-30V
G1
2
7 _{D1 RDS(on) typ. 0.042Ω}
S2
3
G2
4
6
D2
5
D2
max. 0.058Ω
I_D
Top View
-4.9A
Description
Specifically designed for Automotive applications, these
HEXFET^® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Thermal Resistance
Drain-Source Voltage
g Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g ^{Continuous Source Current (Diode Conduction)}
Power Dissipation
g Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Parameter
R_θJA
g Junction-to-Ambient
Max.
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
± 20
140
-2.8
0.20
-5.0
-55 to + 150
Max.
62.5
Units
V
A
W
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11