AUIRF7304Q Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
PD - 97653A
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual P Channel MOSFET
l Dynamic dV/dT Rating
l Logic Level
l 150°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF7304Q
HEXFET^® Power MOSFET
S1
1
V ⁸
D1
(BR)DSS
G1
2
7
D1
S2
3
6 _{D2 RDS(on) max.}
G2
4
5
D2
Top View
I_D
-20V
0.090Ω
-4.3A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7304Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Parameter
10 Sec. Pulsed Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
c ^{Continuous Drain Current, VGS @ -4.5V}
Pulsed Drain Current
e Power Dissipation
Max.
-4.7
-4.3
-3.4
-17
2.0
Units
A
W
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
g Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.016
± 12
-5.0
-55 to + 150
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R_θJA
fg Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/23/11