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| AUIRF7207Q Datasheet, PDF (1/8 Pages) International Rectifier – Advanced Process Technology Low On-Resistance | |||
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AUTOMOTIVE GRADE
AUIRF7207Q
Featuresï
ï¬ï Advanced Process Technology
ï¬ï Low On-Resistance
ï¬ï P-Channel MOSFET
ï¬ï Dynamic dV/dT Rating
ï¬ï 150°C Operating Temperature
ï¬ï Fast Switching
ï¬ï Fully Avalanche Rated
ï¬ï Lead-Free, RoHS Compliant
ï¬ï Automotive Qualified*
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide
variety of other applications.
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
VDSS
RDS(on) max
ID
-20V
0.06ï
-5.4A
SO-8
Base part number
AUIRF7207Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tube
95
Tape and Reel
2500
Orderable Part Number
AUIRF7207Q
AUIRF7207QTR
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
EAS
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current ï
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy (Thermally Limited) ï
Operating Junction and
Storage Temperature Range
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-55 to + 150
Units
V
A
W
W/°C
V
V
mJ
°C
Thermal Resistance
Symbol
Rï±JA
Parameter
Junction-to-Ambient ï
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Typ.
âââ
Max.
50
Units
°C/W
1 www.irf.com © 2013 International Rectifier
April 30, 2013
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