AUIRF7103Q Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

AUTOMOTIVE GRADE
Features
l Advanced Planar Technology
l Dual N Channel MOSFET
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF7103Q
HEXFET^® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_(BR)DSS
R_DS(on) max.
I_D
50V
130m
3.0A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 4.5V
c ^{Continuous Drain Current, VGS @ 4.5V}
Pulsed Drain Current
e Power Dissipation
Linear Derating Factor
f ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
h Repetitive Avalanche Energy
g Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig. 16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_JL
Junction-to-Drain Lead
R_JA
fg Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
December 5, 2012