AUIRF6218S Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
AUIRF6218S
Features
l Advanced Planar Technology
l Low On-Resistance
l P-Channel
l Dynamic dV/dT Rating
l 175°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
AUIRF6218L
HEXFET^® Power MOSFET
D _V(BR)DSS
R_DS(on) max
-150V
150m
S I_D
-27A
D
D
DS
G
D²Pak
AUIRF6218S
GD ^S
TO-262
AUIRF6218L
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Pa ram ete r
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Maximum Power Dissipation
EAS
IAR
dv/dt
T_J
T _STG
d ^{Linear Derating Factor}
Single Pulse Avalanche Energy (Thermally Limited)
Ù Avalanche Current
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from cas
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RJC
RJA
Pa ram ete r
g J unc tion- to- Cas e
h Junction-to-Ambient (P CB M ounted, s teady s tate)
Max.
-150
± 20
-27
-19
-110
250
1.6
210
-16
8.2
-55 to + 175
300
10 lbf•in (1.1N•m)
Ty p.
–––
–––
Max.
0.61
40
U nits
V
A
W
W/°C
mJ
A
V/ns
°C
U nits
°C/W
www.irf.com
1
08/20/2012