AUIRF5210S Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology P-Channel MOSFET

AUTOMOTIVE GRADE _AUIRF5210S
Features
l Advanced Planar Technology
l P-Channel MOSFET
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the
designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
other applications.
HEXFET^® Power MOSFET
D _V(BR)DSS
R_DS(on) max.
S I_D
-100V
60m
-38A
D
G
Gate
S
D
G
D²Pak
AUIRF5210S
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TA = 25°C
P_D @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
V_GS
EAS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
RJC
RJA
h Junction-to-Case
g Junction-to-Ambient (PCB Mount, steady state)
Max.
-38
-24
-140
3.1
170
1.3
± 20
120
-23
17
-7.4
-55 to + 150
300
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/20/2012