AUIRF4905S Datasheet, PDF (1/14 Pages) International Rectifier – Advanced Planar Technology P-Channel MOSFET

AUTOMOTIVE GRADE
Features
l Advanced Planar Technology
l P-Channel MOSFET
l Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRF4905S/L
HEXFET^® Power MOSFET
D
V_(BR)DSS
-55V
R_DS(on) max.
20m
G
I_{D (Silicon Limited)}
-70A
S
I_{D (Package Limited)}
-42A
Description
Specifically designed for Automotive applica-
tions, this cellular design of HEXFET® Power
MOSFETs utilizes the latest processing tech-
niques to achieve low on-resistance per silicon
area. This benefit combined with the fast switch-
ing speed and ruggedized device design that
HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient
and reliable device for use in Automotive and a
wide variety of other applications.
D
D
DS
G
D²Pak
AUIRF4905S
GD ^S
TO-262
AUIRF4905L
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Package Limited)
™ Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
™ Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
R_JA
j Junction-to-Case
ij Junction-to-Ambient (PCB mount)
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
-70
-44
-42
-280
170
1.3
± 20
140
790
See Fig. 12a, 12b, 15, 16
-55 to + 150
300
y y 10 lbf in (1.1N m)
Typ.
–––
–––
Max.
0.75
40
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/20/2012