AUIRF3710Z Datasheet, PDF (1/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97470
AUIRF3710Z
AUIRF3710ZS
Features
O Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 18mΩ
G
I_D = 59A
S
TO-220AB
AUIRF3710Z
D²Pak
AUIRF3710ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
P_D @T_C = 25°C Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested)
I_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally limited)
h Single Pulse Avalanche Energy Tested Value
c Avalanche Current
E_AR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
k Mounting torque, 6-32 or M3 screw
Thermal Resistance
Max.
59
42
240
160
1.1
± 20
170
200
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
R_θJC
j Junction-to-Case
Typ.
–––
Max.
0.92
Units
°C/W
R_θCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
R_θJA
Junction-to-Ambient (PCB Mount, steady state)
–––
40
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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3/19/10