AUIRF3315S Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

PD - 97733
AUTOMOTIVE GRADE
AUIRF3315S
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) max.
S ^ID
150V
82m
21A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
G
Gate
S
D
G
D²Pak
AUIRF3315S
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
21
A
15
84
3.8
W
94
V_GS
E_AS
I_AR
E_AR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
0.63
± 20
350
12
9.4
2.5
W/°C
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
R_JC
h Junction-to-Case
Parameter
Typ.
–––
Max.
1.6
Units
°C/W
R_JA
g Junction-to-Ambient (PCB Mount, steady state)
–––
40
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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