AUIRF3205 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97741
AUIRF3205
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for
use in Automotive and a wide variety of other appli-
cations.
HEXFET^® Power MOSFET
D _V(BR)DSS
R_DS(on) max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
55V
8.0m
g 110A
75A
D
G
Gate
DS
G
TO-220AB
AUIRF3205
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
110g
80g
Units
A
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
75
I_DM
c Pulsed Drain Current
390
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
200
W
1.3
W/°C
V_GS
Gate-to-Source Voltage
E_AS
d Single Pulse Avalanche Energy (Thermally Limited)
I_AR
c Avalanche Current
E_AR
ch Repetitive Avalanche Energy
± 20
V
264i
mJ
62
A
20
mJ
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
y y ³⁰⁰
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R_JC
j Junction-to-Case
Typ.
–––
Max.
0.75
Units
R_CS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
R_JA
Junction-to-Ambient
–––
62
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/10/11