AUIRF2804S-7P Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 97459
AUTOMOTIVE GRADE
AUIRF2804S-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET^® Power MOSFET
D
V_(BR)DSS
R_DS(on) max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
40V
1.6mΩ
320A
240A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating .
These features combine to make this design an ex-
tremely efficient and reliable device for use in Automo-
tive applications and a wide variety of other applica-
tions.
D
G
Gate
D
S
SS
GSS
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
320
A
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
230
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Package Limited)
c Pulsed Drain Current
240
1360
P_D @T_C = 25°C Maximum Power Dissipation
330
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
c Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
2.2
± 20
630
1050
See Fig.12a,12b,15,16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
R_θJC
j Junction-to-Case
Parameter
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
R_θJA
i Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010