AUIRF2804 Datasheet, PDF (1/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD -96290
AUIRF2804
AUIRF2804S
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
AUIRF2804L
HEXFET^® Power MOSFET
D
V_(BR)DSS
40V
k R_DS(on) typ. 1.5mΩ
G
max. 2.0mΩk
c I_{D (Silicon Limited)} 270A
S
I_{D (Package Limited)} 195A
D
D
D
DS
G
DS
G
TO-220AB
AUIRF2804
D²Pak
AUIRF2804S
DS
G
TO-262
AUIRF2804L
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Max.
c 270
190
195
1080
300
Units
A
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
e Single Pulse Avalanche Energy Tested Value
d Avalanche Current
d Repetitive Avalanche Energy
2.0
± 20
540
1160
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
R_θJC
l Junction-to-Case
Parameter
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
R_θJA
j Junction-to-Ambient (PCB Mount, steady state)
HEXFET^® is a registered trademark of International Rectifier.
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/10