AUIRF1404S Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD -97680
AUIRF1404S
Features
● Advanced Planar Technology
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUIRF1404L
HEXFET^® Power MOSFET
D
V_DSS
40V
R_DS(on) typ.
3.5mΩ
max. 4.0mΩ
G
I_{D (Silicon Limited)}
h 162A
S
I_{D (Package Limited)}
75A
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
S
GD
D²Pak
AUIRF1404S
S
D
G
TO-262
AUIRF1404L
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Parameter
i Continuous Drain Current, VGS @ 10V (Silicon Limited)
i Continuous Drain Current, VGS @ 10V (Silicon Limited)
™i ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
di Single Pulse Avalanche Energy (Thermally Limited)
Ù Avalanche Current
™ Repetitive Avalanche Energy
ei Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mounted, steady-state)
Max.
h 162
h 115
75
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/07/11