AUIRF1324S-7P Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET

Power MOSFET

AUTOMOTIVE GRADE
PD - 96296
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRF1324S-7P
HEXFET^® Power MOSFET
D
G
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
V_(BR)DSS
24V
R_DS(on) typ. 0.8m_Ω
max. 1.0mΩ
c I_{D (Silicon Limited)} 429A
I_{D (Package Limited)} 240A
Description
Specifically designed for Automotive applications, this
D
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
S
SS
S
S
G
D²Pak 7 Pin
applications and a wide variety of other applications.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Max.
429™
303™
240
1640
Units
A
P_D @T_C = 25°C _{Maximum Power Dissipation}
300
W
Linear Derating Factor
2.0
W/°C
V_GS
E_{AS (Thermally limited)}
I_AR
E_AR
dv/dt
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
230
See Fig. 14, 15, 22a, 22b,
1.6
V
mJ
A
mJ
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
R_θJC
k Junction-to-Case
R_θJA
j Junction-to-Ambient (PCB Mount) , D²Pak
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/25/10