AUIRF1010EZ Datasheet, PDF (1/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 95962
AUIRF1010EZ
AUIRF1010EZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
G
O Lead-Free, RoHS Compliant
O Automotive Qualified *
AUIRF1010EZL
HEXFET^® Power MOSFET
D
V_(BR)DSS
60V
R_DS(on) max.
8.5mΩ
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
84A
75A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other appli-
D
D
D
DS
G
DS
G
TO-220AB
D²Pak
AUIRF1010EZ ^AUIRF1010EZS
GD ^S
TO-262
AUIRF1010EZL
cations.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Package Limited)
I_DM
c Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
84
60
A
75
340
140
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
0.90
± 20
99
180
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
R_θJC
k Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
R_θJA
j Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/23/10