AN-1040 Datasheet, PDF (1/13 Pages) Cymbet Corporation – EVAL Kit GUI Software and TI Firmware Readme

Application Note AN-1040
System Simulation Using Power MOSFET Quasi-
Dynamic Model
Table of Contents
Page
Objective: To examine the Quasi-Dynamic model of power MOSFET and its
effects on device thermal response ...................................................................... 1
Introduction: The simulation approach vs. analytic design.................................... 2
Three Levels of Thermal Modeling........................................................................ 2
Simulation & Results: 14V ISA system example ................................................... 4
The International Rectifier Automotive group explores the use of power MOSFET
Quasi-Dynamic modeling of power MOSFETs and their effects on device thermal
response. The simulation approach can show the system characteristics more
accurately, so that the appropriate amounts of optimization can be designed into
the system. Characterizing thermal performance is important, since Pspice and
SABER device models display electrical behavior or physics modeling, and all
parameters are considered thermally independent. This is not true in real system,
because several key parameters change with temperature variation.