8GBU Datasheet, PDF (1/5 Pages) International Rectifier – 8.0 Amps Single Phase Full Wave

Bulletin I2719 rev. F 11/02
8.0 Amps Single Phase Full Wave
8GBU Series
Bridge Rectifier
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V_RMS)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
I_O(AV) = 8A
V_RRM = 50/ 1200V
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
8GBU
Units
I_O
8
A
@ T_C
100
°C
I_FSM @50Hz
200
A
@ 60Hz
210
A
I²t
@ 50Hz
200
A²s
@ 60Hz
184
A²s
V_RRM range
50 to 1200
V
T_J
- 55 to 150
o_C
www.irf.com
8GBU
1