50MT060WHA Datasheet, PDF (1/7 Pages) International Rectifier – HALF-BRIDGE IGBT MTP

Bulletin I27190 02/05
"HALF-BRIDGE" IGBT MTP
Features
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED ^TM Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMD Thermistor (NTC)
• Al₂O₃ DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL E78996 approved
50MT060WHA
50MT060WHTA
Warp Speed IGBT
V_CES = 600V
V_{CE(on) typ.} = 2.3V @
V_GE = 15V, I_C = 50A
T_C = 25°C
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
V_CES
I_C
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
P_D
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 109°C
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
@ T_C = 109°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ T_C = 25°C
@ T_C = 100°C
www.irf.com
Max
600
114
50
350
350
34
200
± 20
2500
658
263
Units
V
A
V
W
1