50MT060ULSA Datasheet, PDF (1/10 Pages) International Rectifier – Ultrafast Speed IGBT

Bulletin I27191 02/05
"LOW SIDE CHOPPER" IGBT MTP
Features
• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED ^TM Diode with UltraSoft
Reverse Recovery
• Very Low Conduction and Switching
Losses
• Optional SMD Thermistor (NTC)
• Al₂O₃ DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved ( file E78996 )
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
50MT060ULSA
50MT060ULSTA
Ultrafast Speed IGBT
V_CES = 600V
I_C = 100A,
T_C = 25°C
MMTP
Absolute Maximum Ratings
Parameters
V_CES
I_C
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
P_D
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 122°C
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
@ T_C = 100°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power
Dissipation
IGBT
Diode
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
www.irf.com
Max
600
100
50
200
200
48
200
± 20
2500
445
175
205
83
Units
V
A
V
W
1