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| 40MT120UHA Datasheet, PDF (1/13 Pages) International Rectifier – UltraFast NPT IGBT | |||
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Bulletin I27194 rev. A 01/06
"HALF-BRIDGE" IGBT MTP
40MT120UHA
40MT120UHTA
UltraFast NPT IGBT
Features
⢠UltraFast Non Punch Through (NPT)
Technology
⢠Positive VCE(ON)Temperature Coefficient
⢠10µs Short Circuit Capability
⢠HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery and Low VF
⢠Square RBSOA
⢠Al2O3 DBC
⢠Optional SMD Thermistor (NTC)
⢠Very Low Stray Inductance Design for
High Speed Operation
Benefits
⢠Optimized for Welding, UPS and SMPS
Applications
⢠Rugged with UltraFast Performance
⢠Benchmark Efficiency above 20KHz
⢠Outstanding ZVS and Hard Switching
Operation
⢠Low EMI, requires Less Snubbing
⢠Excellent Current Sharing in Parallel
Operation
⢠Direct Mounting to Heatsink
⢠PCB Solderable Terminals
⢠Very Low Junction-to-Case Thermal Resis
tance
Absolute Maximum Ratings
Parameters
VCES
IC
I CM
I LM
IF
I FM
VGE
VISOL
PD
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
@ TC = 22°C
@ TC = 104°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 105°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
@ TC = 25°C
@ TC = 100°C
VCES = 1200V
IC = 80A
MMTP
Max
1200
80
40
160
160
21
160
± 20
2500
463
185
Units
V
A
V
W
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