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| 40MT120UH Datasheet, PDF (1/13 Pages) International Rectifier – HALF-BRIDGE IGBT MTP UltraFast NPT IGBT | |||
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I27126 rev. C 02/03
"HALF-BRIDGE" IGBT MTP
40MT120UH
UltraFast NPT IGBT
Features
⢠UltraFast Non Punch Through (NPT)
Technology
⢠Positive VCE(ON)Temperature Coefficient
⢠10µs Short Circuit Capability
⢠HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
⢠Low Diode VF
⢠Square RBSOA
⢠Aluminum Nitride DBC
⢠Optional SMT Thermistor (NTC)
⢠Very Low Stray Inductance Design for
High Speed Operation
⢠UL approved (file E78996)
Benefits
⢠Optimized for Welding, UPS and SMPS
Applications
⢠Rugged with UltraFast Performance
⢠Benchmark Efficiency above 20KHz
⢠Outstanding ZVS and Hard Switching
Operation
⢠Low EMI, requires Less Snubbing
⢠Excellent Current Sharing in Parallel
Operation
⢠Direct Mounting to Heatsink
⢠PCB Solderable Terminals
VCES = 1200V
IC = 80A
TC = 25°C
MMTP
Absolute Maximum Ratings
Parameters
VCES
IC
I CM
I LM
IF
I FM
VGE
VISOL
PD
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
@ TC = 25°C
@ TC = 105°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 105°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT) @ TC = 25°C
@ TC = 100°C
Max
1200
80
40
160
160
21
160
± 20
2500
463
185
Units
V
A
V
W
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