2N7522 Datasheet, PDF (1/1 Pages) International Rectifier – Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel

Preliminary Data Sheet
Repetitive Avalanche and dv/dt Rated
MOSFET Transistor P-Channel
2N7522
200Volt, 0.505 Ω , RAD Hard MOSFET
R5
Package: SMD-0.5
Product Summary
Hex Size
Technology
3
RAD Hard
BV_DSS
-200V
R_{DS (on)}
0.505 Ω
I_D
-8.0A
Absolute Maximum Ratings
Parameter
I_D @ V_GS = -12V, T_C = 25°C
I_D @ V_GS = -12V, T_C = 100°C
Continuous Drain Current
Continuous Drain Current
P_D @ T_C = 25°C
Power Dissipation
V_GS
Gate-to-Source Voltage
E_AS
Single Pulse Avalanche Energy
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
T_J
Operating Junction Range
Value
-8.0
-5.0
75
±20
75
-8.0
7.5
-55 to 150
Units
A
A
W
V
mJ
A
mJ
°C
Pre-Irradiation
Electrical Characteristics @ T_J = 25° C (Unless Otherwise Specified)
Parameter
Min Typ. Max Units Test Conditions
BV_DSS Drain-to-Source Breakdown Voltage -200
-
-
V V_GS=0V, I_D=-1.0mA
R_DS(on) Static Drain-to-Source On-State
Resistance
-
-
0.505
Ω VGS=-12V, ID=-5.0A
V_{GS (th)}
I_DSS
I_DSS
I_GSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
-2.0
-
-
-
-
-
-
-
-4.0
-10
-25
-100
V V_DS=V_GS, I_D=-1.0mA
µA V_DS= -160V, V_GS=0V
µA VDS =-160V, TJ=125°C
nA V_GS=-20V
I_GSS
Gate-to-Source Leakage Reverse
-
-
100
nA V_GS=20V
Qg
Total Gate Charge
-
-
43
nC VGS=-12V, ID=-8.0A
Thermal Resistance
Parameter
R_thJC Junction-to-Case
Min Typ. Max Units
-
- 1.67 °C/W
Test Conditions
01/23/01