25MT060WF Datasheet, PDF (1/3 Pages) International Rectifier – FULL-BRIDGE IGBT MTP

Target Data 05/01
"FULL-BRIDGE" IGBT MTP
25MT060WF
Warp Speed IGBT
Features
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED ^TM Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermystor Inside
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
Benefits
• Optimized for Welding, UPS and SMPS Applications
• Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal Resistance
V_CES = 600V
V_{CE(on) typ.} = 2.2V @
V_GE = 15V, I_C = 25A
T_C = 25°C
Absolute Maximum Ratings
Parameters
V_CES
I_C
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
P_D
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 100°C
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
@ T_C = 100°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ T_C = 25°C
@ T_C = 100°C
Max
600
50
25
200
200
25
200
± 20
2500
900
400
Units
V
A
V
W
1