1N5818 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Schottky Barrier Rectifiers

SCHOTTKY RECTIFIER
Bulletin PD-20590 rev. B 11/04
1N5818
1N5819
1.0 Amp
Major Ratings and Characteristics
Characteristics
Values Units
I_F(AV) Rectangular
waveform
V_RRM
1.0
A
30/40
V
I_FSM @ tp = 5 µs sine
225
A
V_F @1 Apk, T_J = 25°C
0.55
V
T_J range
- 40 to 150
°C
Description/Features
The 1N5818/ 1N5819 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power supplies,
converters, free-wheeling diodes, and reverse battery
protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free plating
CASE STYLE AND DIMENSIONS
Device Marking: 1N581X
www.irf.com
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
1