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| 19MT050XF Datasheet, PDF (1/10 Pages) International Rectifier – FULL BRIDGE FREDFET MTP HEXFET POWER MOSFET | |||
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Bulletin I27128 Rev.C 07/03
"FULL-BRIDGE" FREDFET MTP
Features
 Low On-Resistance
 High Performance Optimised Built-in Fast
Recovery Diodes
 Fully Characterized Capacitance and
Avalanche Voltage and Current
 Aluminum Nitride DBC
 Very Low Stray Inductance Design for
High Speed Operation
19MT050XF
HEXFET® Power MOSFET
31 A
VDSS = 500V
Benefits
 Low Gate Charge Qg results in Simple
Drive Requirement
 Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
 Low Trr and Soft Diode Reverse Recovery
 Optimized for Welding, UPS and SMPS
Applications
 Outstanding ZVS and High Frequency
Operation
 Direct Mounting to Heatsink
 PCB Solderable Terminals
 Very Low Junction-to-Case Thermal Resistance
 ULApprovedE78996
MMTP
Absolute Maximum Ratings
ID
IDM
PD
VGS
VISOL
dv/dt
Parameters
Continuos Drain Current @ VGS = 10V
Pulsed Drain Current
(1)
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Gate-to-Source Voltage
@ TC = 25°C
@ TC = 100°C
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Peak Diode Recovery dv/dt
(3)
www.irf.com
Max
31
19
124
1140
456
± 30
2500
15
Units
A
W
V
V/ ns
1
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