IPS825-40B Datasheet, PDF (2/4 Pages) IP SEMICONDUCTOR CO., LTD. – silicon controlled rectifiers

IPS825-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Symbol
Test Condition
IGT
VGT
VGD
IL
IH
dV/dt
Required DC gate current to trigger at 25℃
at - 40℃
at 125℃
MAX
Required DC voltage to trigger
at 25℃
(anode supply = 6V, resistive load) at - 40℃
at 125℃
MAX
DC gate voltage not to trigger
(Tj = 125℃, VDRM = rated value)
MAX
IG = 1.2 IGT
Holding current
VD = 67% VDRM gate open Tj = 125 ℃
MAX
MAX
MIN
IPS825-xxB
40
40
100
15
1.5
2.5
1.0
0.2
80
60
500
Unit
mA
V
V
mA
mA
V/us
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM
IDRM / IRRM
ITM = 50A, tp = 380uS
VD = VDRM
VR = VRRM
Tj = 25℃
Tj = 25℃
Tj = 125℃
Value
(MAX)
1.6
10
4
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case for DC TO-220B
Value
1.0
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : [phone], Fax : [phone], [e-mail]
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